TEMD5120X01 document number 84680 rev. 1.3, 07-may-07 vishay semiconductors www.vishay.com 1 20535 silicon pin photodiode, rohs compliant, released for lead (pb)-free solder process, aec-q101 released description TEMD5120X01 is a high speed and high sensitive pin photodiode. it is a miniature surface mount device (smd) including the chip with a 4.4 mm 2 sensitive area and an infrared bandpass filter matched to ir emitters operating at wavelength 870 nm or 950 nm. features ? product designed and qualified acc. aec-q101 for the automotive market ? radiant sensitive area: a = 4.4 mm 2 ? wide angle of half sensitivity ? = 65 ? high photo sensitivity ? fast response times ? small junction capacitance ? plastic package with ir filter: = 870...950 nm ? floor life: 72 h, msl 4, acc. j-std-20 ? lead (pb)-free component ? component in accordance to elv 2000/53/ec, rohs 2002/95/ec and weee 2002/96/ec applications ? automotive sensors ? infrared detectors ? high speed photo detectors absolute maximum ratings t amb = 25 c, unless otherwise specified parameter test condition symbol value unit reverse voltage v r 60 v power dissipation t amb 25 c p v 215 mw junction temperature t j 100 c operating temperature range t amb - 40 to + 100 c storage temperature range t stg - 40 to + 100 c soldering temperature in accordance with fig. 8 t sd 260 c thermal resistance junction/ ambient r thja 350 k/w e4
www.vishay.com 2 document number 84680 rev. 1.3, 07-may-07 TEMD5120X01 vishay semiconductors electrical characteristics t amb = 25 c, unless otherwise specified optical characteristics t amb = 25 c, unless otherwise specified typical characteristics t amb = 25 c, unless otherwise specified parameter test condition symbol min ty p. max unit forward voltage i f = 50 ma v f 11.3v breakdown voltage i r = 100 a, e = 0 v (br) 60 v reverse dark current v r = 10 v, e = 0 i ro 230na diode capacitance v r = 0 v, f = 1 mhz, e = 0 c d 48 pf parameter test condition symbol min ty p. max unit open circuit voltage e e = 1 mw/cm 2 , = 950 nm v o 350 mv temperature coefficient of v o e e = 1 mw/cm 2 , = 950 nm tk vo -2.6 mv/k short circuit current e e = 1 mw/cm 2 , = 950 nm i k 32 a temperature coefficient of i k e e = 1 mw/cm 2 , = 950 nm tk ik 0.1 %/k reverse light current e e = 1 mw/cm 2 , = 950 nm, v r = 5 v i ra 25 35 a angle of half sensitivity ? 65 deg wavelength of peak sensitivity p 940 nm range of spectral bandwidth 0.5 790 to 1050 nm noise equivalent power v r = 10 v, = 950 nm nep 4 x 10 -14 w/ hz rise time v r = 10 v, r l = 1 k , = 820 nm t r 100 ns fall time v r = 10 v, r l = 1 k , = 820 nm t f 100 ns figure 1. reverse dark current vs. ambient temperature 20 40 60 8 0 1 10 100 1000 100 94 8 403 v r = 10 v t am b - am b ient temperat u re (c) i ro - re v erse dark c u rrent (na) figure 2. relative reverse light current vs. ambient temperature 0.6 0. 8 1.0 1.2 1.4 94 8 409 v r =5 v = 950 nm 100 8 0 60 40 20 0 i - relati v e re v erse light c u rrent t - am b ient temperat u re (c) am b ra rel
TEMD5120X01 document number 84680 rev. 1.3, 07-may-07 vishay semiconductors www.vishay.com 3 figure 3. reverse light current vs. irradiance figure 4. reverse light current vs. reverse voltage figure 5. diode capacitance vs. reverse voltage 0.01 0.1 1 0.1 1 10 100 1000 10 94 8 421 v r =5 v = 950 nm ee - irradiance (m w /cm ) 2 i ra - re v erse light c u rrent ( a) 0.1 1 10 1 10 100 v r - re v erse v oltage ( v ) 100 94 8 422 i - re v erse light c u rrent ( a) ra 1m w /cm 2 0.5 m w /cm 2 0.2 m w /cm 2 0.1 m w /cm 2 0.05 m w /cm 2 = 950 nm 0.1 1 10 0 20 40 60 8 0 c - diode capacitance (pf) d v r - re v erse v oltage ( v ) 100 94 8 423 e = 0 f = 1 mhz figure 6. relative spectral sensitivity vs. wavelength figure 7. relative radiant sens itivity vs. angular displacement 94 8 426 s( ) rel - relati v e spectral sensi v ity 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 750 8 50 950 1050 1150 - w a v elength (nm) 0.4 0.2 0 0.2 0.4 s - relati v e sensiti v ity rel 0.6 94 8 406 0.6 0.9 0. 8 0 30 10 20 40 50 60 70 8 0 0.7 1.0
www.vishay.com 4 document number 84680 rev. 1.3, 07-may-07 TEMD5120X01 vishay semiconductors package dimensions in millimeters dra w ing- n o.: 6.541-5059.01-4 iss u e: 4; 26.04.07 192 8 0 n ot indicated tolerances 0.1 minim u m order qu antity (moq): 1500 pcs (1 reel)
TEMD5120X01 document number 84680 rev. 1.3, 07-may-07 vishay semiconductors www.vishay.com 5 taping dimensions in millimeters 20537
www.vishay.com 6 document number 84680 rev. 1.3, 07-may-07 TEMD5120X01 vishay semiconductors reflow solder profiles drypack devices are packed in moisture barrier bags (mbb) to prevent the products from moisture absorption during transportation and storage. each bag contains a desiccant. floor life floor life (time between soldering and removing from mbb) must not exceed the time indicated in j-std-020. temd5110 is released for: moisture sensitivity le vel 4, according to jedec, j-std-020 floor life: 72 h conditions: t amb < 30 c, rh < 60 % drying in case of moisture absorption devices should be baked before soldering. conditions see j-std-020 or label. devices taped on reel dry using recommended conditions 192 h at 40 c (+ 5 c), rh < 5 % or 96 h at 60 c (+ 5 c), rh < 5 %. figure 8. lead (pb)-free (sn) reflow solder profile figure 9. lead tin (snpb) reflow solder profile 20 temperat u re (c) 20 s ~ 30 s ~ 40 s 120 s ~ 125 c 145 c 210 c 250 c 260 c 2 8 0 260 240 220 200 1 8 0 160 140 8 0 60 40 100 120 0 0 time (s) preheat reflow coolin g 19030 300 270 240 210 1 8 0 150 120 90 60 30 max. 160 c f u ll line: typical dotted: process limits time ( s ) temperat u re ( c ) lead temperature 90 s - 120 s 300 250 200 150 100 50 0 0 max. 240 c ca. 230 c 10 s 215 c max 40s 2 k/s - 4 k/s 94 8 62 5 250 200 150 100 50
TEMD5120X01 document number 84680 rev. 1.3, 07-may-07 vishay semiconductors www.vishay.com 7 ozone depleting subst ances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releas es of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operat ing parameters must be validated for each customer application by the customer. should the buyer use vish ay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vis hay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
legal disclaimer notice vishay document number: 91000 www.vishay.com revision: 08-apr-05 1 notice specifications of the products displayed herein are subjec t to change without notice. vishay intertechnology, inc., or anyone on its behalf, assume s no responsibility or liability fo r any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. except as provided in vishay's terms and conditions of sale for such products, vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and /or use of vishay products including liab ility or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyrigh t, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify vishay for any damages resulting from such improper use or sale.
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